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Method of Determining Statistically-Correct Spatial Interpolation Modeling Parameters from Measurements (02-Feb-2010)

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IP.com Prior Art Database Disclosure (Source: IPCOM)
Disclosure Number IPCOM000192793D dated 02-Feb-2010
Originally published in Prior Art Database
Disclosed by: IBM
Country: Undisclosed
Disclosure File: 6 pages / 321.6 KB / English (United States)

This disclosure describes a method of determining Statistically-Corrected Spatial Interpolation (SCSI) modeling parameters based on on-wafer measurement data.

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Method of Determining Statistically-Correct Spatial Interpolation Modeling Parameters from Measurements

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This disclosure describes a method of determining Statistically-Corrected Spatial Interpolation (SCSI) modeling parameters based on on-wafer measurement data. This method allows the determination of the distance between equilateral the triangle points used in SCSI methodology. The method allows the hardware-accurate representation of measured spatially-dependent statistical correlated on-chip process variables. An 130nm BiCMOS technology example of this method in practice is presented here. This disclosure relates to filed patent application: BUR920070269US1: "Methods for Distributing a Random Variable Using Statistically-Correct Spatial Interpolation" which describes the general SCSI modeling methodology. A flow chart of the described method of converting on-wafer measurements to SCSI modeling parameters is shown in Figure1.

    Hardware Measurements of identical structures at different locations from many wafers

Figure 1

Figure 2 shows the general statistical correlation behavior of a SCSI modeled, regular array of on-wafer process data points. The SCSI method, in this case, has divided the modeled region into smaller equilateral triangle regions. After SCSI modeling, the regular array of process data

p

 oints exhibits the statistical correlation (ρ) versus on-wafer distance (d) behavior shown in the scatter plot. There is a straight line going from ρ=1 at d=0μm to ρ=0 at d0=100μm. Also shown in the figure is a good-fit mathematical relationship of the statistical-correlation versus distance:

1

Sort measurement data by measurement location

Remove outliers and determine μ and σ

     Determine statistical correlation between locations across many wafer measurements removing any data pairs from two different locations if either location contains an outlier for a given wafer measurement

Determine "best-fit" curve that minimizes the sum of squared error of measured statistical correlation data

   Determine d0 from" best fit" curve using SCSI simulation "best-fit" relationship to the curve known empirically from simulations

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ρ(d)=cos^2(πd/2rmax). Also shown in the figure is the computer simulation obtained relationship d0=0.7*rmax. A more accurate relationship between d0 and rmax was actually found to be d0=(2/3)*rmax ord0=0.667*rmax. So, what is needed to properly model on-wafer/on-chip statistical correlation behavior is the value of rmax. Once rmax is known, the distance between the vertices of the SCSI equilateral triangles, d0, can be determined and the required on-wafer/on-chip statistical behavior can be accurately modeled. The method described here allows rmax, and hence, d0=0.667*rmax to...

(Source: IPCOM)
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(Source: IPCOM)