Infineon Technologies

A semiconductor device includes a semiconductor body including a trench with first and second opposing sidewalls. A first electrode is arranged in a lower portion of the trench and a second electrode in an...

A memory device includes a multi gate field effect transistor (MuGFET) having a fin with a contact area. A programmable memory element abuts the fin contact area.

Structures, layouts and methods of forming integrated circuits are described. In various embodiments, the current invention includes an asymmetric segmented transistor. The asymmetric segmented transistor...

An electronic device is disclosed. One embodiment provides a metallic body. A first electrically insulating layer is applied over the metallic body and having a thickness of less than 100 μm. A first thermally...

Structures and methods of forming metallization layers on a semiconductor component are disclosed. The method includes etching a metal line trench using a metal line mask, and etching a via trench using a via...

The disclosed invention provides a structure and method for detecting address line (e.g., wordline, bitline) memory failures. In one embodiment, the method and structure comprise generating an address...

In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is...

One embodiment relates to a memory device. The memory device includes a capacitor having a first capacitor plate and a second capacitor plate, wherein the first and second capacitor plates are separated by an...

A tire localization system for locating the position of a tire of a vehicle having five or more wheels, includes a number of tire pressure monitoring system (TPMS) wheel modules of a vehicle TPMS, each wheel...

The invention relates to a device to be used with a thread scheduling method, and to a thread scheduling method comprising the steps of performing a scheduling for threads to be executed by a multithreaded (MT)...

One embodiment includes an encapsulated semiconductor package having a lead frame with die pad surrounded by a plurality of first and second leadfingers. A semiconductor chip including chip contact pads on its...

A field effect transistor with a heterostructure includes a strained monocrystalline semiconductor layer formed on a carrier material, which has a relaxed monocrystalline semiconductor layer made of a first...

An integrated circuit structure includes a substrate and at least one pair of complementary transistors on or in the substrate. The pair of complementary transistors comprises a first transistor and a second...

A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter...

A normally-off power field-effect transistor semiconductor structure is provided. The structure includes a channel, a source electrode, a gate electrode and trapped charges which arranged between the gate...

One or more embodiments relate to a method of forming a semiconductor device, including: providing a substrate; forming a gate stack over the substrate, the gate stack including a control gate over a charge...

Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a...

A method of measurement reporting and a cellular radio terminal are provided. A method of measurement reporting comprises receiving, while a measurement reporting scheme is active, a request for a radio...

Capacitors are formed in metallization layers of semiconductor device in regions where functional conductive features are not formed, more efficiently using real estate of integrated circuits. The capacitors...

An embodiment of the invention relates to a power converter including a resistor divider with an internal node to sense an input line voltage. The internal node is operable as a multifunctional pin. A...

A method of manufacturing a semiconductor device includes placing a chip on a carrier, and applying an electrically conducting layer to the chip and the carrier. The method additionally includes converting the...

An integrated circuit includes a semiconductor substrate, a first electrical contact formed on the semiconductor substrate, and a first heat sink element bonded to the first electrical contact via a galvanic...

A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the...

A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge...

Two integrated circuits having circuitry on one of their major surfaces are ground on their opposite major surfaces to reduce their thickness. The ground integrated circuits are then adhered together to form a...

A semiconductor device as described herein includes a body region of a first conductivity type adjoining a channel region of a second conductivity at a first side of the channel region. A gate control region of...

A vertical transistor component is produced by providing a semiconductor body with a first surface and a second surface, producing at least one gate contact electrode in a trench, the trench extending from the...

A method for manufacturing semiconductor devices is disclosed. In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor...

A method for transmitting a plurality of data symbols using a plurality of transmit antennas and a plurality of transmission resources is described, in which transmission symbols are generated and associated...

One aspect is a circuit arrangement including a first semiconductor switching element, a second semiconductor switching element connected in series with the first semiconductor switching element and a...

An embodiment provides a device for generating an output signal as a function of an input signal, wherein a plurality of circuit sections generate partial signals and the output signal is composed from the...

Methods of wirelessly communicating are disclosed. In one embodiment, a transmit angle along a circumference of a revolution is determined, a transmit time of the transmit angle based at least in part on a time...

One aspect is an integrated circuit arrangement. The arrangement includes a first terminal, which can be brought to a first supply potential, a second terminal, which can be brought to a second supply...

A method for insulating a semiconducting material in a trench from a substrate, wherein the trench is formed in the substrate and comprising an upper portion and a lower portion, the lower portion being lined...

A component has a device applied to a device carrier, a first conducting layer grown onto the device and onto the device carrier, and an insulating material applied to the first conducting layer such that only...

In one embodiment, a method of operating a switched-mode power supply that has a switch coupled to a drive signal is disclosed. The method includes deactivating the drive signal at a first instance of time, and...

A semiconductor arrangement including a load transistor and a sense transistor that are integrated in a semiconductor body. One embodiment provides a number of transistor cells integrated in the semiconductor...

One embodiment of the present invention relates to a variable capacitor that operates without moving mechanical parts. In this capacitor electrically conductive electrodes are separated by an enclosed chamber...

A circuit for driving a transistor half bridge is disclosed that comprises a series circuit of a first and a second transistor both having intrinsic or external free-wheeling diodes coupled in parallel. The...

A mask and method for patterning a semiconductor wafer is disclosed. A mask set is fabricated on a transparent substrate. A mask layer comprising mask region elements that transmit light is disposed on the...

A semiconductor component includes a semiconductor body having a first side, a second side, an edge delimiting the semiconductor body in a lateral direction, an inner region and an edge region. A first...

An integrated circuit including a field effect controllable trench transistor having two-control electrodes is disclosed. One embodiment provides a trench having a first control electrode and a second control...

One embodiment of the present invention relates to a method for transistor matching. The power transmitter comprises a first, second, and third amplification path. The paths are selectively activated and...

The invention concerns a module comprising a carrier element, a semiconductor device mounted on said carrier element and a silicon-based insulating layer. The silicon-based insulating layer is arranged on the...

In one implementation an output signal of an oscillator is varied to be within a desired frequency band with respect to a reference signal, the output signal having a plurality of phases. The implementation may...

A semiconductor sensor device is electrically coupled to an object. An attachment member attaches the semiconductor sensor device to the object. The attachment member comprises a first conductive contact region...

A device (12) supplies energy to a rapid cycling and/or rapidly cycled integrated circuit (13, 52) which includes a circuit load (17) and an internal capacity (15) connected parallel to the circuit load (17)....

The present disclosure relates to circuits and methods for improving the performance of plural DC-DC voltage converters.

Embodiments of this disclosure relate to electrostatic discharge (ESD) protection techniques. For example, some embodiments include a variable resistor that selectively shunts power of an incoming ESD pulse...

A power semiconductor module including a contact element. One embodiment provides an electrically conductive contact element extending in a longitudinal direction and having a first end and a second end lying...