| No | Document | Title | Date |
|---|---|---|---|
| 401 |
US 8055816 B2
patent document
|
Memory controllers, memory systems, solid state drives and methods for processing a number of commands
The present disclosure includes methods and devices for a memory controller. In one or more embodiments, a memory controller includes a plurality of back end channels, and a command queue communicatively...
|
08-Nov-2011 |
| 402 |
US 8053909 B2
patent document
|
Semiconductor component having through wire interconnect with compressed bump
A method for fabricating a semiconductor component with a through wire interconnect includes the step of providing a substrate having a circuit side, a back side, and a through via. The method also includes the...
|
08-Nov-2011 |
| 403 |
US 2011/0266610 A1
patent application
|
Memory devices having reduced interference between floating gates and methods of fabricating such devices
A memory array comprising transistors having isolated inter-gate dielectric regions with respect to one another. Transistors are formed such that each of the transistors in the array has a charge storage region...
|
03-Nov-2011 |
| 404 |
US 2011/0267362 A1
patent application
|
Gamma variation using illumination intensity
A gamma variation of image intensity is created by varying the illumination intensity during a pulse width modulated display time period. During the pulse width modulated display time period a ramp signal may...
|
03-Nov-2011 |
| 405 |
US 2011/0269252 A1
patent application
|
Method for positioning spacers for pitch multiplication
Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and...
|
03-Nov-2011 |
| 406 |
US 2011/0269288 A1
patent application
|
Methods of Forming CoSi2, Methods of Forming Field Effect Transistors, and Methods of Forming Conductive Contacts
The invention included to methods of forming CoSi2, methods of forming field effect transistors, and methods of forming conductive contacts. In one implementation, a method of forming CoSi2 includes forming a...
|
03-Nov-2011 |
| 407 |
US 2011/0266696 A1
patent application
|
Semiconductor device packages including a semiconductor device and a redistribution element
A method for fabricating a chip-scale board-on-chip substrate, or redistribution element, includes forming conductive planes on opposite sides of a substrate. A first of the conductive planes includes two sets...
|
03-Nov-2011 |
| 408 |
US 2011/0266647 A1
patent application
|
Methods of Forming Isolated Active Areas, Trenches, and Conductive Lines in Semiconductor Structures and Semiconductor Structures Including the Same
Methods of pitch doubling of asymmetric features and semiconductor structures including the same are disclosed. In one embodiment, a single photolithography mask may be used to pitch double three features, for...
|
03-Nov-2011 |
| 409 |
US 2011/0266694 A1
patent application
|
Methods of manufacturing semiconductor structures and devices including nanotubes, and semiconductor structures, devices, and systems fabricated using such methods
A method of forming a plurality of nanotubes is disclosed. Particularly, a substrate may be provided and a plurality of recesses may be formed therein. Further, a plurality of nanotubes may be formed generally...
|
03-Nov-2011 |
| 410 |
US 2011/0267882 A1
patent application
|
Memory array with inverted data-lines pairs
At least one data-line pair has a first data line aligned with a first column of memory cells and a second data line aligned with a second column of memory cells. The first data line is coupled to the second...
|
03-Nov-2011 |
| 411 |
US 2011/0267912 A1
patent application
|
Digit line equilibration using access devices at the edge of sub arrays
A method of equilibrating digit lines, a memory array, device, system and wafer for digit lines configured in an open digit line architecture. The digit lines are equilibrated by coupling a terminated end of a...
|
03-Nov-2011 |
| 412 |
US 2011/0266701 A1
patent application
|
Novel build-up package for integrated circuit devices, and methods of making same
A device is disclosed which includes, in one illustrative example, an integrated circuit die having an active surface and a molded body extending around a perimeter of the die, the molded body having lips that...
|
03-Nov-2011 |
| 413 |
US 2011/0271158 A1
patent application
|
Method and apparatus for testing high capacity/High bandwidth memory devices
A plurality of stacked memory device die and a logic circuit are connected to each other through a plurality of conductors. The stacked memory device die are arranged in a plurality of vaults. The logic circuit...
|
03-Nov-2011 |
| 414 |
US 2011/0266689 A1
patent application
|
Methods Of Forming A Plurality Of Conductive Lines In The Fabrication Of Integrated Circuitry, Methods Of Forming An Array Of Conductive Lines, And Integrated Circuitry
A method of forming a pair of conductive lines in the fabrication of integrated circuitry includes forming a trench into a damascene material received over a substrate. Conductive material is deposited over the...
|
03-Nov-2011 |
| 415 |
US 2011/0271038 A1
patent application
|
Indexed register access for memory device
Example embodiments of a non-volatile memory device may comprise receiving an index value at one or more input terminals of a memory device and storing the index value in a first register of the memory device....
|
03-Nov-2011 |
| 416 |
US 8048755 B2
patent document
|
Resistive memory and methods of processing resistive memory
Resistive memory and methods of processing resistive memory are described herein. One or more method embodiments of processing resistive memory include conformally forming a cell material in an opening in an...
|
01-Nov-2011 |
| 417 |
US 8049514 B2
patent document
|
Integrated circuit inspection system
Methods and systems that include a nanotube used as an emitter in the testing and fabrication of integrated circuits. The nanotube emits a signal to a substrate. Based on the signal or the electrical...
|
01-Nov-2011 |
| 418 |
US 8048708 B2
patent document
|
Method and apparatus providing an imager module with a permanent carrier
Method and apparatus providing a wafer level fabrication of imager modules in which a permanent carrier protects imager devices on an imager wafer and is used to support a lens wafer.
|
01-Nov-2011 |
| 419 |
US 8049298 B2
patent document
|
Isolation trenches for memory devices
A first dielectric plug is formed in a portion of a trench that extends into a substrate of a memory device so that an upper surface of the first dielectric plug is recessed below an upper surface of the...
|
01-Nov-2011 |
| 420 |
US 8049331 B2
patent document
|
Structure and method for forming a capacitively coupled chip-to-chip signaling interface
A system and method for providing capacitively-coupled signaling in a system-in-package (SiP) device is disclosed. In one embodiment, the system includes a first semiconductor device and an opposing second...
|
01-Nov-2011 |
| 421 |
US 8049791 B2
patent document
|
Method, apparatus and system using hierarchical histogram for automatic exposure adjustment of an image
An automatic exposure control circuit and a method for generating a hierarchical histogram for exposure control. The control circuit and the method result in the generation of a histogram with sub-histograms of...
|
01-Nov-2011 |
| 422 |
US 8050096 B2
patent document
|
Programming method to reduce gate coupling interference for non-volatile memory
A non-volatile memory device and programming process is described that compensates for coupling effects on threshold gate voltages of adjacent floating gate or non-conductive floating node memory cells by...
|
01-Nov-2011 |
| 423 |
US 8051358 B2
patent document
|
Error recovery storage along a nand-flash string
Apparatus and methods store error recovery data in different dimensions of a memory array. For example, in one dimension, block error correction codes (ECC) are used, and in another dimension, supplemental...
|
01-Nov-2011 |
| 424 |
US 8049258 B2
patent document
|
Disposable pillars for contact formation
Sacrificial plugs for forming contacts in integrated circuits, as well as methods of forming connections in integrated circuit arrays are disclosed. Various pattern transfer and etching steps can be used to...
|
01-Nov-2011 |
| 425 |
US 8050102 B2
patent document
|
Word line activation in memory devices
Memory devices and methods facilitate flexibility in applying differing biasing schemes to word lines. For example, one such memory device can include an architecture capable of partitioning word lines into one...
|
01-Nov-2011 |
| 426 |
US 8049200 B2
patent document
|
Bottom electrode for memory device and method of forming the same
Contacts having use in an integrated circuit and exemplary methods of forming the contacts are disclosed. The methods involve forming a conductive cap over a metal plug. The invention can mitigate keyholes in...
|
01-Nov-2011 |
| 427 |
US 8048756 B2
patent document
|
Method for removing metal layers formed outside an aperture of a BPSG layer utilizing multiple etching processes including electrochemical-mechanical polishing
A microelectronic substrate and method for removing adjacent conductive and nonconductive materials from a microelectronic substrate. In one embodiment, the microelectronic substrate includes a substrate...
|
01-Nov-2011 |
| 428 |
US 8050090 B2
patent document
|
Memory page boosting method, device and system
A memory page boosting method, device and system for boosting unselected memory cells in a multi-level cell memory cell is described. The memory device includes a memory array of multi-level cell memory cells...
|
01-Nov-2011 |
| 429 |
US 2011/0261624 A1
patent application
|
Data line management in a memory device
Methods for programming a memory device, memory devices configured to perform the disclosed programming methods, and memory systems having a memory device configured to perform the disclosed programming methods...
|
27-Oct-2011 |
| 430 |
US 2011/0260778 A1
patent application
|
Semiconductor Temperature Sensor Using Bandgap Generator Circuit
A combined bandgap generator and temperature sensor for an integrated circuit is disclosed. Embodiments of the invention recognize that bandgap generators typically contain at least one temperature-sensitive...
|
27-Oct-2011 |
| 431 |
US 2011/0263135 A1
patent application
|
Semiconductor Processing Methods, And Methods For Forming Silicon Dioxide
Some embodiments include methods for semiconductor processing. A semiconductor substrate may be placed within a reaction chamber. The semiconductor substrate may have an inner region and an outer region...
|
27-Oct-2011 |
| 432 |
US 2011/0260298 A1
patent application
|
Semiconductor structures including square cuts in single crystal silicon and method of forming same
A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts...
|
27-Oct-2011 |
| 433 |
US 2011/0260236 A1
patent application
|
Transistor Constructions and Processing Methods
A transistor construction includes a first floating gate having a first conductive or semiconductive surface and a second floating gate having a second conductive or semiconductive surface. A dielectric region...
|
27-Oct-2011 |
| 434 |
US 2011/0261607 A1
patent application
|
Arrays Of Vertically Stacked Tiers Of Non-Volatile Cross Point Memory Cells, Methods Of Forming Arrays Of Vertically Stacked Tiers Of Non-Volatile Cross Point Memory Cells, And Methods Of Reading A Data Value Stored By An Array Of Vertically Stacked Tiers Of Non-Volatile Cross Point Memory Cells
An array of vertically stacked tiers of non-volatile cross point memory cells includes a plurality of horizontally oriented word lines within individual tiers of memory cells. A plurality of horizontally...
|
27-Oct-2011 |
| 435 |
US 8045040 B2
patent document
|
Correction of non-uniform sensitivity in an image array
An improved non-uniform sensitivity correction algorithm for use in an imager device (e.g., a CMOS APS). The algorithm provides zones having flexible boundaries which can be reconfigured depending upon the type...
|
25-Oct-2011 |
| 436 |
US 8045356 B2
patent document
|
Memory modules having daisy chain wiring configurations and filters
Examples described include memory units coupled to a controller using a daisy chain wiring configuration. A filter located between a first memory unit and the controller attenuates a particular frequency, which...
|
25-Oct-2011 |
| 437 |
US 8043911 B2
patent document
|
Methods of forming semiconductor constructions
The invention includes methods of forming semiconductor constructions in which a single etch is utilized to penetrate through a titanium-containing layer and partially into a silicon-containing layer beneath...
|
25-Oct-2011 |
| 438 |
US 8043915 B2
patent document
|
Pitch multiplied mask patterns for isolated features
Crisscrossing spacers formed by pitch multiplication are used as a mask to form isolated features, such as contacts vias. A first plurality of mandrels are formed on a first level and a first plurality of...
|
25-Oct-2011 |
| 439 |
US 8043975 B2
patent document
|
Silicon dioxide deposition methods using at least ozone and TEOS as deposition precursors
Embodiments disclosed herein pertain to silicon dioxide deposition methods using at least ozone and tetraethylorthosilicate (TEOS) as deposition precursors. In one embodiment, a silicon dioxide deposition...
|
25-Oct-2011 |
| 440 |
US 8043964 B2
patent document
|
Method for providing electrical connections to spaced conductive lines
An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads...
|
25-Oct-2011 |
| 441 |
US 8044479 B2
patent document
|
Transistors, semiconductor devices, assemblies and constructions
Embodiments disclosed herein include methods in which a pair of openings are formed into semiconductor material, with the openings being spaced from one another by a segment of the semiconductor material....
|
25-Oct-2011 |
| 442 |
US 8045386 B2
patent document
|
Methods and apparatus for programming a memory cell using one or more blocking memory cells
Methods and apparatus for programming a memory cell using one or more blocking memory cells facilitate mitigation of capacitive voltage coupling. The methods include applying a program voltage to a selected...
|
25-Oct-2011 |
| 443 |
US 8045395 B2
patent document
|
Circuits, systems and methods for driving high and low voltages on bit lines in non-volatile memory
An integrated circuit bit line driver system includes a plurality of bit line drivers coupled to respective bit lines of an array of non-volatile memory cells. Each of the bit line drivers includes a bias...
|
25-Oct-2011 |
| 444 |
US 8046646 B2
patent document
|
Defective memory block identification in a memory device
During manufacture and testing of a memory device, a memory test is performed to determine which, if any, memory blocks are defective. A memory map of the defective blocks is stored in one of the defect-free...
|
25-Oct-2011 |
| 445 |
US 8045416 B2
patent document
|
Method and memory device providing reduced quantity of interconnections
Methods, devices and systems for reducing the quantity of external interconnections of a memory device are disclosed. Implementation of one such method, device and system includes inputting over an address bus...
|
25-Oct-2011 |
| 446 |
US 8043961 B2
patent document
|
Method of forming a bond pad
A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive...
|
25-Oct-2011 |
| 447 |
US 8046542 B2
patent document
|
Fault-tolerant non-volatile integrated circuit memory
Apparatus and methods are disclosed, such as those that store data in a plurality of non-volatile integrated circuit memory devices, such as NAND flash, with convolutional encoding. A relatively high code rate...
|
25-Oct-2011 |
| 448 |
US 8043944 B2
patent document
|
Process for enhancing solubility and reaction rates in supercritical fluids
Processes for enhancing solubility and the reaction rates in supercritical fluids are provided. In preferred embodiments, such processes provide for the uniform and precise deposition of metal-containing films...
|
25-Oct-2011 |
| 449 |
US 8046628 B2
patent document
|
Failure recovery memory devices and methods
Memory devices and methods are described that include serially chained memory devices. In one or more of the configurations shown, a serial chain of memory devices includes a number of memory devices, and an...
|
25-Oct-2011 |
| 450 |
US 2011/0256644 A1
patent application
|
Masks for microlithography and methods of making and using such masks
Masks for microlithography apparatus, methods for making such masks, and methods for exposing photosensitive materials to form arrays of microfeatures on semiconductor wafers using such masks. In one...
|
20-Oct-2011 |
| 451 |
US 2011/0254627 A1
patent application
|
Signaling systems, preamplifiers, memory devices and methods
Signaling systems, preamplifiers, memory devices and methods are disclosed, such as a signaling system that includes a transmitter configured to receive a first digital signal. The transmitter provides a...
|
20-Oct-2011 |
| 452 |
US 2011/0256711 A1
patent application
|
Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods
Microfeature workpieces having conductive vias formed by chemically reactive processes, and associated systems and methods are disclosed. A method in accordance with one embodiment includes disposing a...
|
20-Oct-2011 |
| 453 |
US 2011/0256706 A1
patent application
|
Method of forming a semiconductor structure
A method for reducing the effective thickness of a gate oxide using nitrogen implantation and anneal subsequent to dopant implantation and activation is provided. More particularly, the present invention...
|
20-Oct-2011 |
| 454 |
US 2011/0258425 A1
patent application
|
Boot partitions in memory devices and systems
The present disclosure includes boot partitions in memory devices and systems, and methods associated therewith. One or more embodiments include an array of memory cells, wherein the array includes a boot...
|
20-Oct-2011 |
| 455 |
US 2011/0254075 A1
patent application
|
Use of dilute steam ambient for improvement of flash devices
A flash memory integrated circuit and a method for fabricating the same. A gate stack includes an initial oxide layer directly in contact with a silicon layer, defining an oxide-silicon interface therebetween....
|
20-Oct-2011 |
| 456 |
US 2011/0254067 A1
patent application
|
DRAM Layout with Vertical FETS and Method of Formation
DRAM cell arrays having a cell area of about 4F2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide material and are...
|
20-Oct-2011 |
| 457 |
US 2011/0254144 A1
patent application
|
Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices
Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices are disclosed herein. In one embodiment, a packaged microelectronic device can include a support member and at...
|
20-Oct-2011 |
| 458 |
US 2011/0254129 A1
patent application
|
Electrical components for microelectronic devices and methods of forming the same
Electrical components for microelectronic devices and methods for forming electrical components. One particular embodiment of such a method comprises depositing an underlying layer onto a workpiece, and forming...
|
20-Oct-2011 |
| 459 |
US 2011/0255342 A1
patent application
|
Memory voltage cycle adjustment
The present disclosure includes various method, device, system, and module embodiments for memory cycle voltage adjustment. One such method embodiment includes counting a number of process cycles performed on a...
|
20-Oct-2011 |
| 460 |
US 2011/0253042 A1
patent application
|
Methods of Processing Semiconductor Substrates, Electrostatic Carriers for Retaining Substrates for Processing, and Assemblies Comprising Electrostatic Carriers Having Substrates Electrostatically Bonded Thereto
A method of processing a substrate includes physically contacting an exposed conductive electrode of an electrostatic carrier with a conductor to electrostatically bond a substrate to the electrostatic carrier....
|
20-Oct-2011 |
| 461 |
US 2011/0255343 A1
patent application
|
Programming in a memory device
Methods for programming a memory device and memory devices are provided. According to at least one such method, a selected memory cell is programmed by a series of programming pulses. The series of programming...
|
20-Oct-2011 |
| 462 |
US 2011/0256694 A1
patent application
|
Methods of Forming One or More Covered Voids in a Semiconductor Substrate, Methods of Forming Field Effect Transistors, Methods of Forming Semiconductor-On-Insulator Substrates, Methods of Forming a Span Comprising Silicon Dioxide, Methods of Cooling Semiconductor Devices, Methods of Forming Electromagnetic Radiation Emitters and Conduits, Methods of Forming Imager Systems, Methods of Forming Nanofluidic Channels, Fluorimetry Methods, and Integrated Circuitry
Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic...
|
20-Oct-2011 |
| 463 |
US 2011/0258360 A1
patent application
|
Methods and Systems to Accomplish Variable Width Data Input
Disclosed are methods and systems for variable width data input to a pattern-recognition processor. A variable width data input method may include receiving bytes over a data bus having a first width and...
|
20-Oct-2011 |
| 464 |
US 2011/0252623 A1
patent application
|
Microelectronic devices and microelectronic support devices, and associated assemblies and methods
Microelectronic devices, associated assemblies, and associated methods are disclosed herein. For example, certain aspects of the invention are directed toward a microelectronic device that includes a...
|
20-Oct-2011 |
| 465 |
US 2011/0253965 A1
patent application
|
Vertical transistor phase change memory
Vertical transistor phase change memory and methods of processing phase change memory are described herein. One or more methods include forming a dielectric on at least a portion of a vertical transistor,...
|
20-Oct-2011 |
| 466 |
US 2011/0255341 A1
patent application
|
Programming methods for a memory device
Methods for programming, memory devices, and memory systems are disclosed. In one such method for programming, a target memory cell is partially programmed to a final target programmed state where the partial...
|
20-Oct-2011 |
| 467 |
US 2011/0254163 A1
patent application
|
Sleeve insulators and semiconductor device including the same
A method and structure are disclosed that are advantageous for aligning a contact plug within a bit line contact corridor (BLCC) to an active area of a DRAM that utilizes an insulated sleeve structure. A sleeve...
|
20-Oct-2011 |
| 468 |
US 2011/0254604 A1
patent application
|
Control of a Variable Delay Line Using Line Entry Point to Modify Line Power Supply Voltage
Disclosed herein is a VDL/DLL architecture in which the power supply to the VDL, VccVDL, is regulated at least as a function of the entry point of the input signal (ClkIn) into the VDL. Specifically, VccVDL is...
|
20-Oct-2011 |
| 469 |
US 2011/0255344 A1
patent application
|
Charge loss compensation during programming of a memory device
A selected memory cell on a selected word line is programmed through a plurality of programming pulses that are incremented by a step voltage. After a successful program verify operation, programming of the...
|
20-Oct-2011 |
| 470 |
US 2011/0254072 A1
patent application
|
Charge storage structures and methods
Methods, devices, and systems associated with charge storage structures in semiconductor devices are described herein. In one or more embodiments, a method of forming nanodots includes forming at least a...
|
20-Oct-2011 |
| 471 |
US 8039287 B2
patent document
|
Method of forming high gain, low noise, photodiode sensor for image sensors
Embodiments of the present invention provide a pixel cell for an image sensor that includes a photodiode, which provides high gain, low noise, and low dark current. The pixel cell includes a photodiode...
|
18-Oct-2011 |
| 472 |
US 8039881 B2
patent document
|
Deuterated structures for image sensors and methods for forming the same
A pixel cell with a photo-conversion device and at least one structure includes a deuterated material adjacent the photo-conversion device.
|
18-Oct-2011 |
| 473 |
US 8042012 B2
patent document
|
Systems and devices including memory with built-in self test and methods of making and using the same
Disclosed are methods, systems and devices, such as a device including a data location, a quantizing circuit coupled to the data location, and a test module coupled to the quantizing circuit. The quantizing...
|
18-Oct-2011 |
| 474 |
US 8039882 B2
patent document
|
High gain, low noise photodiode for image sensors and method of formation
Embodiments of the present invention provide a pixel cell for an image sensor that includes a photodiode, which provides high gain, low noise, and low dark current. The pixel cell includes a photodiode...
|
18-Oct-2011 |
| 475 |
US 8040732 B2
patent document
|
NAND memory device column charging
Embodiments of NAND Flash memory devices and methods recognize that effective column coupling capacitance can be reduced by maintaining a sourced voltage on adjacent columns of an array. Maintaining the columns...
|
18-Oct-2011 |
| 476 |
US 8042022 B2
patent document
|
Method, system, and apparatus for distributed decoding during prolonged refresh
Methods, apparatuses and systems are disclosed for preserving, verifying, and correcting data in DRAM device during a power-saving mode. In the power-saving mode, memory cells in the DRAM device may be...
|
18-Oct-2011 |
| 477 |
US 8039300 B2
patent document
|
Reproducible resistance variable insulating memory devices and methods for forming same
The present invention relates to the use of a shaped bottom electrode in a resistance variable memory device. The shaped bottom electrode ensures that the thickness of the insulating material at the tip of the...
|
18-Oct-2011 |
| 478 |
US 8039377 B2
patent document
|
Semiconductor constructions
Some embodiments include methods of forming capacitors. A first section of a capacitor may be formed to include a first storage node, a first dielectric material, and a first plate material. A second section of...
|
18-Oct-2011 |
| 479 |
US 8039340 B2
patent document
|
Methods of forming an array of memory cells, methods of forming a plurality of field effect transistors, methods of forming source/drain regions and isolation trenches, and methods of forming a series of spaced trenches into a substrate
A method of forming a series of spaced trenches into a substrate includes forming a plurality of spaced lines over a substrate. Anisotropically etched sidewall spacers are formed on opposing sides of the spaced...
|
18-Oct-2011 |
| 480 |
US 8039399 B2
patent document
|
Methods of forming patterns utilizing lithography and spacers
Some embodiments include methods of forming patterns. A first set of features is photolithographically formed over a substrate, and then a second set of features is photolithographically formed over the...
|
18-Oct-2011 |
| 481 |
US 8039357 B2
patent document
|
Integrated circuitry and methods of forming a semiconductor-on-insulator substrate
Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic...
|
18-Oct-2011 |
| 482 |
US 8039348 B2
patent document
|
Vertical gated access transistor
According to one embodiment of the present invention, a method of forming an apparatus comprises forming a plurality of deep trenches and a plurality of shallow trenches in a first region of a substrate. At...
|
18-Oct-2011 |
| 483 |
US 8040753 B2
patent document
|
System and method for capturing data signals using a data strobe signal
A signal capture system and method is used to capture a data signal using a data strobe signal having a preamble of strobe signal transitions. The system includes a data latch circuit receiving the data signal....
|
18-Oct-2011 |
| 484 |
US 8039327 B2
patent document
|
Transistor forming methods
A transistor forming method includes forming a dielectric spacer in a trench surrounding an active area island, forming line openings through the spacer, and forming a gate line extending through the line...
|
18-Oct-2011 |
| 485 |
US 2011/0247561 A1
patent application
|
Thermal Chemical Vapor Deposition Methods, and Thermal Chemical Vapor Deposition Systems
One embodiment thermal chemical vapor deposition method includes exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the...
|
13-Oct-2011 |
| 486 |
US 2011/0249488 A1
patent application
|
Data Cells with Drivers and Methods of Making and Operating the Same
Disclosed are methods and devices, among which is a device that includes a first semiconductor fin having a first gate, a second semiconductor fin adjacent the first semiconductor fin and having a second gate,...
|
13-Oct-2011 |
| 487 |
US 2011/0249503 A1
patent application
|
Select gate programming in a memory device
Methods for programming select gates, memory devices, and memory systems are disclosed. In one such method for programming, a program inhibit voltage is transferred from a source line to unselected bit lines....
|
13-Oct-2011 |
| 488 |
US 2011/0248752 A1
patent application
|
Clock signal generators having a reduced power feedback clock path and methods for generating clocks
Memories, clock generators and methods for providing an output clock signal are disclosed. One such method includes delaying a buffered clock signal by a adjustable delay to provide an output clock signal,...
|
13-Oct-2011 |
| 489 |
US 2011/0249494 A1
patent application
|
Multiple select gates with non-volatile memory cells
Multiple select gates in association with non-volatile memory cells are described. Various embodiments include multiple select gate structure, process, and operation and their applicability for memory devices,...
|
13-Oct-2011 |
| 490 |
US 2011/0250753 A1
patent application
|
Atomic Layer Deposition Methods
An atomic layer deposition method includes providing a semiconductor substrate within a deposition chamber. A first metal halide-comprising precursor gas is flowed to the substrate within the chamber effective...
|
13-Oct-2011 |
| 491 |
US 2011/0250759 A1
patent application
|
Method to Reduce Charge Buildup During High Aspect Ratio Contact Etch
A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A...
|
13-Oct-2011 |
| 492 |
US 2011/0249499 A1
patent application
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Integrated Circuit Including Memory Array Having a Segmented Bit Line Architecture and Method of Controlling and/or Operating Same
An integrated circuit device (e.g., a logic device or a memory device) having a memory cell array including a plurality of bit lines (e.g., first and second bit lines) and a plurality of bit line segments...
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13-Oct-2011 |
| 493 |
US 2011/0249507 A1
patent application
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Sensing memory cells
The present disclosure includes methods, devices, modules, and systems for operating memory cells. One method embodiment includes applying a ramping voltage to a control gate of a memory cell and to an...
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13-Oct-2011 |
| 494 |
US 2011/0248778 A1
patent application
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Devices comprising colossal magnetocapacitive materials and related methods
Semiconductor devices include a transistor having a gate structure located close to a channel region that comprises a colossal magnetocapacitive material. The gate structure is configured to affect electrical...
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13-Oct-2011 |
| 495 |
US 2011/0248385 A1
patent application
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Method for selectively forming symmetrical or asymmetrical features using a symmetrical photomask during fabrication of a semiconductor device and electronic systems including the semiconductor device
A method for patterning a material during fabrication of a semiconductor device provides for the selective formation of either asymmetrical features or symmetrical features using a symmetrical photomask,...
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13-Oct-2011 |
| 496 |
US 8034716 B2
patent document
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Semiconductor structures including vertical diode structures and methods for making the same
Semiconductor structures and methods of making a vertical diode structure are provided. The vertical diode structure may have associated therewith a diode opening extending through an insulation layer and...
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11-Oct-2011 |
| 497 |
US 8033884 B2
patent document
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Methods of forming plasma-generating structures; methods of plasma-assisted etching, and methods of plasma-assisted deposition
Some embodiments include methods of forming plasma-generating microstructures. Aluminum may be anodized to form an aluminum oxide body having a plurality of openings extending therethrough. Conductive liners...
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11-Oct-2011 |
| 498 |
US 8034706 B2
patent document
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Contact formation
The present disclosure includes various method of contact embodiments. One such method embodiment includes creating a trench in an insulator stack material of a particular thickness and having a portion of the...
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11-Oct-2011 |
| 499 |
US 8034728 B2
patent document
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Systems and methods for forming metal oxides using metal diketonates and/or ketoimines
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor...
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11-Oct-2011 |
| 500 |
US 8035433 B2
patent document
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Process insensitive delay line
A delay line including a phase detector having two inputs and one output. The first input of the phase detector is connected to an input of the delay line. The second input of the phase detector is connected to...
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11-Oct-2011 |