| No | Document | Title | Date |
|---|---|---|---|
| 1 |
US 2012/0026792 A1
patent application
|
Erase cycle counter usage in a memory device
Memory devices to facilitate adjustment of program voltages applied during a program operation based upon erase operation cycle counter values stored in the memory device. In one such embodiment, an erase cycle...
|
02-Feb-2012 |
| 2 |
US 2012/0030452 A1
patent application
|
Modifying commands
The present disclosure includes methods, devices, modules, and systems for modifying commands. One device embodiment includes a memory controller including a channel, wherein the channel includes a command...
|
02-Feb-2012 |
| 3 |
US 2012/0025402 A1
patent application
|
Methods of forming semiconductor device structures and semiconductor device structures including a uniform pattern of conductive lines
Methods of forming semiconductor device structures are disclosed. One method comprises forming a plurality of loops of a conductive material. Each loop of the plurality of loops comprises a uniform pattern. In...
|
02-Feb-2012 |
| 4 |
US 2012/0028410 A1
patent application
|
Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same
A method of forming a material. The method comprises conducting an ALD layer cycle of a first metal, the ALD layer cycle comprising a reactive first metal precursor and a co-reactive first metal precursor. An...
|
02-Feb-2012 |
| 5 |
US 2012/0026816 A1
patent application
|
Defective memory block identification in a memory device
During manufacture and testing of a memory device, a memory test is performed to determine which, if any, memory blocks are defective. A memory map of the defective blocks is stored in one of the defect-free...
|
02-Feb-2012 |
| 6 |
US 2012/0030529 A1
patent application
|
Refresh of non-volatile memory cells based on fatigue conditions
In one or more of the disclosed embodiments, memory cells in a memory device are refreshed upon an indication of a fatigue condition. In one such embodiment, controller monitors behavior parameters of the cells...
|
02-Feb-2012 |
| 7 |
US 2012/0030545 A1
patent application
|
Error recovery storage along a nand-flash string
Apparatus and methods store error recovery data in different dimensions of a memory array. For example, in one dimension, block error correction codes (ECC) are used, and in another dimension, supplemental...
|
02-Feb-2012 |
| 8 |
US 2012/0030638 A1
patent application
|
Methods for defining evaluation points for optical proximity correction and optical proximity correction methods including same
Methods are disclosed for defining evaluation points for use in optical proximity correction of a rectangular target geometry. A method for defining evaluation points for use in optical proximity correction of...
|
02-Feb-2012 |
| 9 |
US 8107344 B2
patent document
|
Phase masks for use in holographic data storage
A spatial light modulator (SLM) having a phase mask that is provided as an internal component thereof. The phase mask can be provided as a multilevel surface of relatively higher index of refraction material on...
|
31-Jan-2012 |
| 10 |
US 8106438 B2
patent document
|
Stud capacitor device and fabrication method
The present teachings relate to a method of forming a container capacitor structure on a substrate. In one embodiment, the method comprises etching a recess in the substrate, depositing a first conductive layer...
|
31-Jan-2012 |
| 11 |
US 8106520 B2
patent document
|
Signal delivery in stacked device
Some embodiments include apparatus, systems, and methods having a base, a first die, a second arranged in a stacked with the first die and the base, and a structure located in the stack and outside at least one...
|
31-Jan-2012 |
| 12 |
US 8106491 B2
patent document
|
Methods of forming stacked semiconductor devices with a leadframe and associated assemblies
A device is disclosed which includes a first packaged integrated circuit device, a second packaged integrated circuit device positioned above the first packaged integrated circuit device and a plurality of...
|
31-Jan-2012 |
| 13 |
US 8107218 B2
patent document
|
Capacitors
Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second...
|
31-Jan-2012 |
| 14 |
US 8105862 B2
patent document
|
Imager with tuned color filter
An optimized color filter array is formed in, above or below one or more damascene layers. The color filter array includes filter regions which are configured to optimize the combined optical properties of the...
|
31-Jan-2012 |
| 15 |
US 8107305 B2
patent document
|
Integrated circuit memory operation apparatus and methods
Some embodiments include apparatus and methods having a memory cell included in a device, a control line configured to receive a control signal to access the memory cell, and a first line configured to transfer...
|
31-Jan-2012 |
| 16 |
US 8105896 B2
patent document
|
Methods of forming capacitors
A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive...
|
31-Jan-2012 |
| 17 |
US 8106644 B2
patent document
|
Reference circuit with start-up control, generator, device, system and method including same
A reference generator circuit generates a reference signal for use by a regulator in generating operational power for circuits and devices. A start-up circuit includes a self-biased voltage reference and a...
|
31-Jan-2012 |
| 18 |
US 8107296 B2
patent document
|
Mitigation of data corruption from back pattern and program disturb in a non-volatile memory device
In one of the disclosed embodiments, a write algorithm is used to remove errors due to back pattern effects, cell-to-cell capacitive coupling, and program disturb in memory cells. Original data to be programmed...
|
31-Jan-2012 |
| 19 |
US 8105131 B2
patent document
|
Method and apparatus for removing material from microfeature workpieces
Methods and apparatus for removing materials from microfeature workpieces. One embodiment of a subpad in accordance with the invention comprises a matrix having a first surface configured to support a polishing...
|
31-Jan-2012 |
| 20 |
US 8105858 B2
patent document
|
CMOS imager having a nitride dielectric
An imaging device formed as a CMOS semiconductor integrated circuit includes a nitrogen containing insulating material beneath a photogate. The nitrogen containing insulating material, preferably be one of a...
|
31-Jan-2012 |
| 21 |
US 8106488 B2
patent document
|
Wafer level packaging
Through vias in a substrate are formed by creating a trench in a top side of the substrate and at least one trench in the back side of the substrate. The sum of the depths of the trenches at least equals the...
|
31-Jan-2012 |
| 22 |
US 8105956 B2
patent document
|
Methods of forming silicon oxides and methods of forming interlevel dielectrics
A method of forming silicon oxide includes depositing a silicon nitride-comprising material over a substrate. The silicon nitride-comprising material has an elevationally outermost silicon nitride-comprising...
|
31-Jan-2012 |
| 23 |
US 2012/0019293 A1
patent application
|
Delay lock loop phase glitch error filter
A method and apparatus is provided for providing a phase glitch error filter for a delay lock loop. The device comprises a delay lock loop to provide an output signal based upon a phase difference between a...
|
26-Jan-2012 |
| 24 |
US 2012/0023294 A1
patent application
|
Memory device and method having on-board processing logic for facilitating interface with multiple processors, and computer system using same
A memory device includes an on-board processing system that facilitates the ability of the memory device to interface with a plurality of processors operating in a parallel processing manner. The processing...
|
26-Jan-2012 |
| 25 |
US 2012/0021587 A1
patent application
|
Systems and Methods for Forming Metal Oxide Layers
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process...
|
26-Jan-2012 |
| 26 |
US 2012/0021573 A1
patent application
|
Methods Of Forming An Array Of Memory Cells, Methods Of Forming A Plurality Of Field Effect Transistors, Methods Of Forming Source/Drain Regions And Isolation Trenches, And Methods Of Forming A Series Of Spaced Trenches Into A Substrate
A method of forming a series of spaced trenches into a substrate includes forming a plurality of spaced lines over a substrate. Anisotropically etched sidewall spacers are formed on opposing sides of the spaced...
|
26-Jan-2012 |
| 27 |
US 2012/0018693 A1
patent application
|
Confined resistance variable memory cell structures and methods
Confined resistance variable memory cell structures and methods are described herein. One or more methods of forming a confined resistance variable memory cell structure includes forming a via in a memory cell...
|
26-Jan-2012 |
| 28 |
US 2012/0018789 A1
patent application
|
Systems and Devices Including Multi-Gate Transistors and Methods of Using, Making, and Operating the Same
Disclosed are methods of forming transistors. In one embodiment, the transistors are formed by forming a plurality of elliptical bases in a substrate and forming fins form the elliptical bases. The transistors...
|
26-Jan-2012 |
| 29 |
US 2012/0018887 A1
patent application
|
Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
A stackable microelectronic package includes a first microelectronic die attached to and electrically connecting with a first substrate. A second microelectronic die is attached to the first die on one side,...
|
26-Jan-2012 |
| 30 |
US 2012/0019349 A1
patent application
|
Confined resistance variable memory cells and methods
Methods, devices, and systems associated with resistance variable memory device structures are described herein. In one or more embodiments, a method of forming a confined resistance variable memory cell...
|
26-Jan-2012 |
| 31 |
US 2012/0021601 A1
patent application
|
Methods of Forming Through Substrate Interconnects
A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line...
|
26-Jan-2012 |
| 32 |
US 2012/0021594 A1
patent application
|
Methods of Forming a Plurality of Transistor Gates, and Methods of Forming a Plurality of Transistor Gates Having at Least Two Different Work Functions
A method of forming a plurality of transistor gates having at least two different work functions includes forming first and second transistor gates over a substrate having different widths, with the first width...
|
26-Jan-2012 |
| 33 |
US 2012/0021610 A1
patent application
|
Methods of Forming Material on a Substrate, and a Method of Forming a Field Effect Transistor Gate Oxide on a Substrate
The invention includes methods of forming material on a substrate and methods of forming a field effect transistor gate oxide. In one implementation, a first species monolayer is chemisorbed onto a substrate...
|
26-Jan-2012 |
| 34 |
US 8101261 B2
patent document
|
One-dimensional arrays of block copolymer cylinders and applications thereof
Methods for fabricating sublithographic, nanoscale microstructures in one-dimensional arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.
|
24-Jan-2012 |
| 35 |
US 8102006 B2
patent document
|
Different gate oxides thicknesses for different transistors in an integrated circuit
An integrated circuit and gate oxide forming process are disclosed which provide a gate structure that is simple to integrate with conventional fabrication processes while providing different gate oxide...
|
24-Jan-2012 |
| 36 |
US 8102295 B2
patent document
|
Integrators for delta-sigma modulators
Methods, systems and devices are disclosed. Among the disclosed devices is an electronic device that, in certain embodiments, includes a plurality of memory elements or imaging elements connected to a bit-line...
|
24-Jan-2012 |
| 37 |
US 8102707 B2
patent document
|
Non-volatile multilevel memory cells
The present disclosure includes methods, devices, modules, and systems for operating non-volatile multilevel memory cells. One method embodiment includes assigning, to a first cell coupled to a row select line,...
|
24-Jan-2012 |
| 38 |
US 8102710 B2
patent document
|
System and method for setting access and modification for synchronous serial interface NAND
The invention includes a system and method of modifying a setting of a NAND flash memory device using serial peripheral interface (SPI) communication from a master to the NAND flash memory device. One...
|
24-Jan-2012 |
| 39 |
US 8103898 B2
patent document
|
Explicit skew interface for mitigating crosstalk and simultaneous switching noise
Methods and apparatus are disclosed, such as those involving an inter-chip interface configured to receive and process electronic data. One such interface includes a receiver circuit that includes a clock tree...
|
24-Jan-2012 |
| 40 |
US 8103928 B2
patent document
|
Multiple device apparatus, systems, and methods
Data digits and correction digits are received in each of a number of integrated circuit (IC) devices. Apparatus, systems, and methods are disclosed that operate to check the data digits for error in each IC...
|
24-Jan-2012 |
| 41 |
US 8101936 B2
patent document
|
SnSe-based limited reprogrammable cell
Methods and apparatus for providing a memory device that can be programmed a limited number of times. According to exemplary embodiments, a memory device and its method of formation provide a first electrode, a...
|
24-Jan-2012 |
| 42 |
US 8102706 B2
patent document
|
Programming a memory with varying bits per cell
Memory devices adapted to receive and transmit analog data signals representative of two or more bits, such as to facilitate increases in data transfer rates relative to devices communicating data signals...
|
24-Jan-2012 |
| 43 |
US 8102906 B2
patent document
|
Fractional-rate decision feedback equalization useful in a data transmission system
Decision feedback equalization (DFE) circuits are disclosed for use with fractional-rate clocks of lesser frequency than the data signal. For example, a one-half-rate clocked DFE circuit utilizes two input data...
|
24-Jan-2012 |
| 44 |
US 8101454 B2
patent document
|
Method of forming pixel cell having a grated interface
A pixel cell having a photosensor within a silicon substrate; and an oxide layer provided over the photosensor, the oxide layer having a grated interface with said silicon substrate, and a method of fabricating...
|
24-Jan-2012 |
| 45 |
US 8102723 B2
patent document
|
Memory device bit line sensing system and method that compensates for bit line resistance variations
Systems, devices and methods are disclosed, such as a system and method of sensing the voltage on bit lines that, when respective memory cells coupled to the bit lines are being read that compensates for...
|
24-Jan-2012 |
| 46 |
US 8101459 B2
patent document
|
Methods for assembling semiconductor devices in stacked arrangements by positioning spacers therebetween
A method for assembling semiconductor devices includes providing a first semiconductor device, securing spacers to noncircuit bond pads of the first semiconductor device, and positioning a second semiconductor...
|
24-Jan-2012 |
| 47 |
US 8101497 B2
patent document
|
Self-aligned trench formation
Methods for forming a semiconductor device include forming self-aligned trenches, in which a first set of trenches is used to align a second set trenches. Methods taught herein can be used as a pitch doubling...
|
24-Jan-2012 |
| 48 |
US 8101992 B2
patent document
|
Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines
A memory array with staggered local data/bit lines extending generally in a first direction formed in an upper surface of a substrate and memory cell access transistors extending generally upward and aligned...
|
24-Jan-2012 |
| 49 |
US 8102013 B2
patent document
|
Lanthanide doped TiOx films
The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiOX) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and thulium,...
|
24-Jan-2012 |
| 50 |
US 8101464 B2
patent document
|
Microelectronic devices and methods for manufacturing microelectronic devices
Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. One such method includes forming a plurality of apertures in a substrate with the apertures arranged in an...
|
24-Jan-2012 |
| 51 |
US 8102715 B2
patent document
|
Power-off apparatus, systems, and methods
Apparatus, methods, and systems are disclosed, including those that are to prevent a bias voltage from rising to a higher level than a storage node voltage as the bias voltage transitions to a ground level. For...
|
24-Jan-2012 |
| 52 |
US 8103936 B2
patent document
|
System and method for data read of a synchronous serial interface NAND
A method and system is disclosed for operating a NAND memory device. The NAND memory device is operated by transmitting serial peripheral interface signals from a host to a NAND memory device, whereby the...
|
24-Jan-2012 |
| 53 |
US 8102008 B2
patent document
|
Integrated circuit with buried digit line
A method of forming a buried digit line is disclosed. Sacrificial spacers are formed along the sidewalls of an isolation trench, which is then filled with a sacrificial material. One spacer is masked while the...
|
24-Jan-2012 |
| 54 |
US 8102709 B2
patent document
|
Transistor having peripheral channel
Transistors for use in semiconductor integrated circuit devices including a first source/drain region of the transistor is formed around a perimeter of a channel region, and a second source/drain region formed...
|
24-Jan-2012 |
| 55 |
US 8103805 B2
patent document
|
Configuration finalization on first valid NAND command
A startup method and circuit to allow high current consumption for startup processes of a low operating voltage memory device such as a NAND device until the receipt of a valid command to the memory device....
|
24-Jan-2012 |
| 56 |
US 8103940 B2
patent document
|
Programming error correction code into a solid state memory device with varying bits per cell
Memory devices that, in a particular embodiment, receive and transmit analog data signals representative of bit patterns of two or more bits such as to facilitate increases in data transfer rates relative to...
|
24-Jan-2012 |
| 57 |
US 8101903 B2
patent document
|
Method, apparatus and system providing holographic layer as micro-lens and color filter array in an imager
A method, apparatus, and system that provides a holographic layer as a micro-lens array and/or a color filter array in an imager. The method of writing the holographic layer results in overlapping areas in the...
|
24-Jan-2012 |
| 58 |
US 8102700 B2
patent document
|
Unidirectional spin torque transfer magnetic memory cell structure
Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a...
|
24-Jan-2012 |
| 59 |
US 2012/0013273 A1
patent application
|
Solid state lighting devices without converter materials and associated methods of manufacturing
Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second...
|
19-Jan-2012 |
| 60 |
US 2012/0013314 A1
patent application
|
Voltage regulator system
The present disclosure includes circuits, systems and methods for regulating voltage. One voltage regulator system embodiment includes a voltage regulator having an output and a number of stages coupled in...
|
19-Jan-2012 |
| 61 |
US 2012/0016650 A1
patent application
|
Simulating the Transmission and Simultaneous Switching Output Noise of Signals in a Computer System
Methods implementable in a computer system for simulating the transmission of signals across a plurality of data channels (bus) are disclosed. The disclosed techniques simulate the effects of Intersymbol...
|
19-Jan-2012 |
| 62 |
US 2012/0015526 A1
patent application
|
Silicon Dioxide Deposition Methods Using at Least Ozone and TEOS as Deposition Precursors
Embodiments disclosed herein pertain to silicon dioxide deposition methods using at least ozone and tetraethylorthosilicate (TEOS) as deposition precursors. In one embodiment, a silicon dioxide deposition...
|
19-Jan-2012 |
| 63 |
US 2012/0016651 A1
patent application
|
Simulating the Transmission of Asymmetric Signals in a Computer System
Methods implementable in a computer system for simulating the transmission of signals are disclosed. The disclosed techniques simulate the effect of the transmitter as well as the channel on a positive and...
|
19-Jan-2012 |
| 64 |
US 2012/0012855 A1
patent application
|
Solid-state light emitters having substrates with thermal and electrical conductivity enhancements and method of manufacture
Solid-state lighting devices (SSLDs) including a carrier substrate with conductors and methods of manufacturing SSLDs. The conductors can provide (a) improved thermal conductivity between a solid-state light...
|
19-Jan-2012 |
| 65 |
US 2012/0012921 A1
patent application
|
Memory arrays having substantially vertical, adjacent semiconductor structures and the formation thereof
Memory arrays and methods of their formation are disclosed. One such memory array has memory-cell strings are formed adjacent to separated substantially vertical, adjacent semiconductor structures, where the...
|
19-Jan-2012 |
| 66 |
US 2012/0012812 A1
patent application
|
Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing
Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a...
|
19-Jan-2012 |
| 67 |
US 2012/0014166 A1
patent application
|
Resistive memory
The present disclosure includes resistive memory devices and systems having resistive memory cells, as well as methods for operating the resistive memory cells. One memory device embodiment includes at least...
|
19-Jan-2012 |
| 68 |
US 2012/0012914 A1
patent application
|
Semiconductor Constructions, and Methods of Forming Semiconductor Constructions
The invention includes methods of utilizing compositions containing iridium and tantalum in semiconductor constructions, and includes semiconductor constructions comprising compositions containing iridium and...
|
19-Jan-2012 |
| 69 |
US 2012/0013368 A1
patent application
|
Method and system for electrically coupling a chip to chip package
A chip and a chip package can transmit information to each other by using a set of converters capable of communicating with each other through the emission and reception of electromagnetic signals. Both the...
|
19-Jan-2012 |
| 70 |
US 2012/0014185 A1
patent application
|
Circuits, systems and methods for driving high and low voltages on bit lines in non-volatile memory
An integrated circuit bit line driver system includes a plurality of bit line drivers coupled to respective bit lines of an array of non-volatile memory cells. Each of the bit line drivers includes a bias...
|
19-Jan-2012 |
| 71 |
US 2012/0015524 A1
patent application
|
Process for Enhancing Solubility and Reaction Rates In Supercritical Fluids
Processes for enhancing solubility and the reaction rates in supercritical fluids are provided. In preferred embodiments, such processes provide for the uniform and precise deposition of metal-containing films...
|
19-Jan-2012 |
| 72 |
US 8097537 B2
patent document
|
Phase change memory cell structures and methods
Phase change memory cell structures and methods are described herein. A number of methods of forming a phase change memory cell structure include forming a dielectric stack structure on a first electrode,...
|
17-Jan-2012 |
| 73 |
US 8097908 B2
patent document
|
Antiblooming imaging apparatus, systems, and methods
Apparatus, systems, and methods are described to assist in reducing dark current in an active pixel sensor. In various embodiments, a potential barrier arrangement is configured to block the flow of charge...
|
17-Jan-2012 |
| 74 |
US 8098530 B2
patent document
|
Systems and methods for erasing a memory
Methods of erasing a memory, methods of operating a memory, memory devices, and systems. In one such method, an erase block is erased to an intermediate erase voltage before it is erased to a final erase...
|
17-Jan-2012 |
| 75 |
US 8099366 B2
patent document
|
Software distribution method and apparatus
The present invention provides for a method and apparatus for distributing digital information, such as software applications, to application users. By providing the digital information on unused memory space...
|
17-Jan-2012 |
| 76 |
US 8097910 B2
patent document
|
Vertical transistors
The invention includes a semiconductor structure having U-shaped transistors formed by etching a semiconductor substrate. In an embodiment, the source/drain regions of the transistors are provided at the tops...
|
17-Jan-2012 |
| 77 |
US 8099543 B2
patent document
|
Methods of operarting memory devices within a communication protocol standard timeout requirement
The present disclosure includes methods and devices for logical memory blocks. One method for operating a memory device includes receiving a command to operate X pages of the memory device, X being greater than...
|
17-Jan-2012 |
| 78 |
US 8097506 B2
patent document
|
Shallow trench isolation for a memory
In some embodiments, a gate structure with a spacer on its side may be used as a mask to form self-aligned trenches in a microelectronic memory, such as a flash memory. A first portion of the gate structure may...
|
17-Jan-2012 |
| 79 |
US 8097947 B2
patent document
|
Conductive systems and devices including wires coupled to anisotropic conductive film, and methods of forming the same
Methods and apparatus for eliminating wire sweep and shorting while avoiding the use of under-bump metallization and high cost attendant to the use of conventional redistribution layers. An anisotropically...
|
17-Jan-2012 |
| 80 |
US 8097175 B2
patent document
|
Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure
Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. The metal oxide structures and patterns may be...
|
17-Jan-2012 |
| 81 |
US 8098529 B2
patent document
|
Memory device having buried boosting plate and methods of operating the same
Memory devices are disclosed, such as those that include a semiconductor-on-insulator (SOI) NAND memory array having a boosting plate. The boosting plate may be disposed in an insulator layer of the SOI...
|
17-Jan-2012 |
| 82 |
US 8098180 B2
patent document
|
Devices including analog-to-digital converters for internal data storage locations
A device that includes an internal data storage location coupled to an electrical conductor and an analog-to-digital converter coupled to the internal data storage location via the electrical conductor. In some...
|
17-Jan-2012 |
| 83 |
US 2012/0007209 A1
patent application
|
Semiconductor device structures including damascene trenches with conductive structures and related method
A method and apparatus for providing a conductive structure adjacent to a damascene conductive structure in a semiconductor device structure. The semiconductor device structure includes an insulation layer with...
|
12-Jan-2012 |
| 84 |
US 2012/0007256 A1
patent application
|
Redistribution layers for microfeature workpieces, and associated systems and methods
Redistribution layers for microfeature workpieces, and associated systems and methods are disclosed. One method for processing a microfeature workpiece system includes positioning a pre-formed redistribution...
|
12-Jan-2012 |
| 85 |
US 2012/0008399 A1
patent application
|
Methods of operating memories including characterizing memory cell signal lines
Methods of operating memories facilitate compensating for memory cell signal line propagation delays, such as to increase the overall threshold voltage range and non-volatile memory cell states available....
|
12-Jan-2012 |
| 86 |
US 2012/0008409 A1
patent application
|
Reduction of quick charge loss effect in a memory device
Methods for reducing quick charge loss effects, methods for programming, memory devices, memory devices, and memory systems are disclosed. In one such method, a programming pulse is applied to the word line to...
|
12-Jan-2012 |
| 87 |
US 2012/0011409 A1
patent application
|
Devices, methods, and apparatuses for detection, sensing, and reporting functionality for semiconductor memory
Methods, apparatuses and systems are disclosed involving a memory device. In one embodiment, a memory device is disclosed that includes a command error module of the memory device operably coupled to at least...
|
12-Jan-2012 |
| 88 |
US 2012/0008404 A1
patent application
|
System and method for reducing pin-count of memory devices, and memory device testers for same
Methods, memory devices and systems are disclosed. In one embodiment, a non-volatile memory device receives command signals through the same input/output terminals that receive address signals and write data...
|
12-Jan-2012 |
| 89 |
US 2012/0008440 A1
patent application
|
Data retention kill function
Various data protection techniques are provided. In one embodiment, a memory device is provided. The memory device may initiate a security measure upon occurrence of one or more triggering events. The one or...
|
12-Jan-2012 |
| 90 |
US 2012/0009779 A1
patent application
|
Contact formation
The present disclosure includes various methods of contact embodiments. One such method embodiment includes forming a trench in an insulator stack material of a particular thickness. This method includes...
|
12-Jan-2012 |
| 91 |
US 2012/0009793 A1
patent application
|
Method for selectively modifying spacing between pitch multiplied structures
Methods for circuit material processing are provided. In at least one such method, a substrate is provided with a plurality of overlying spacers. The spacers have substantially straight inner sidewalls and...
|
12-Jan-2012 |
| 92 |
US 2012/0007037 A1
patent application
|
Cross-point memory utilizing ru/Si diode
Memory devices utilizing memory cells including a resistive element and a diode coupled in series between two conductors. The diodes include a ruthenium material and a silicon material. The diodes further...
|
12-Jan-2012 |
| 93 |
US 2012/0009776 A1
patent application
|
Semiconductor substrates with unitary vias and via terminals, and associated systems and methods
Semiconductor substrates with unitary vias and via terminals, and associated systems and methods are disclosed. A representative method in accordance with a particular embodiment includes forming a blind via in...
|
12-Jan-2012 |
| 94 |
US 2012/0011335 A1
patent application
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Memory controllers, memory systems, solid state drives and methods for processing a number of commands
The present disclosure includes methods and devices for a memory controller. In one or more embodiments, a memory controller includes a plurality of back end channels, and a command queue communicatively...
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12-Jan-2012 |
| 95 |
US 8093643 B2
patent document
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Multi-resistive integrated circuit memory
A capacitor for use in integrated circuits comprises a layer of conductive material. The layer of conductive material including at least a first portion and a second portion, wherein the first portion and the...
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10-Jan-2012 |
| 96 |
US 8093937 B2
patent document
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Seamless coarse and fine delay structure for high performance DLL
A clock synchronization system and method avoids output clock jitter at high frequencies and also achieves a smooth phase transition at a boundary of coarse and fine delays. The system may use a single coarse...
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10-Jan-2012 |
| 97 |
US 8093666 B2
patent document
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Lanthanide yttrium aluminum oxide dielectric films
Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a variety of electronic systems. The lanthanide yttrium...
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10-Jan-2012 |
| 98 |
US 8093730 B2
patent document
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Underfilled semiconductor die assemblies and methods of forming the same
An apparatus and method may be used for packaging a semiconductor die and a carrier substrate to substantially prevent trapped moisture therebetween and provide a robust, inflexible cost-effective bond. The...
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10-Jan-2012 |
| 99 |
US 8095765 B2
patent document
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Memory block management
Various embodiments include one or more memory devices having at least two planes of physical blocks organized into super blocks, with each super block including a physical block from each of the at least two...
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10-Jan-2012 |
| 100 |
US 8093638 B2
patent document
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Systems with a gate dielectric having multiple lanthanide oxide layers
Electronic systems and methods of forming the electronic systems include a gate dielectric having multiple lanthanide oxide layers. Such electronic systems may be used in a variety of electronic system...
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10-Jan-2012 |